The electronic properties of NbTe2 and doped NbTe2 (NbTe1.8, NbTe1.9 and NbTe2.3) are investigated using angle-resolved photoemission spectroscopy (ARPES) and low energy electron diffraction (LEED). NbTe2 is an interesting material since it exhibits a charge density wave (CDW) transition with a 3 x 1 periodicity at room temperature and a 1 x 4.5 periodicity at lower temperatures. Using ARPES, we reveal that the electronic band structure of NbTe2 remains mostly unchanged between room temperature and low temperature. The LEED provides more convincing results, with both periodicities being observed and fading away around 108 K. For doped NbTe2, the measurements show a dependence on the Te concentration. For NbTe1.8 and NbTe1.9, the LEED measurements are very similar to those of NbTe2, with a weak 1 x 4.5 periodicity appearing. Whereas the NbTe2.3 exhibits a completely different electronic band structure and a shift of the Fermi level at low temperature. These results highlight the importance of Te doping in the sample.